PHE13003C,126 - WeEn Semiconductors

Manufacturer Part Number

PHE13003C,126

Manufacturer

WeEn Semiconductors Co., Ltd

Introduction

The PHE13003C,126 is a single NPN bipolar junction transistor (BJT) from WeEn Semiconductors, designed for a variety of general-purpose applications.

Product Features and Performance

Operating temperature up to 150°C

Maximum collector power dissipation of 2.1W

Maximum collector-emitter breakdown voltage of 400V

Maximum collector current of 1.5A

Minimum DC current gain (hFE) of 5 at 1A, 2V

Product Advantages

Robust and reliable performance

Compact TO-92-3 package

Suitable for high-voltage and high-current applications

Compliant with RoHS directives

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 400V

Current Collector (Ic) (Max): 1.5A

Current Collector Cutoff (Max): 100A

Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A

DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V

Quality and Safety Features

RoHS compliant

Robust TO-92-3 package

Compatibility

Can be used in a wide range of general-purpose electronic circuits and devices

Application Areas

Power supplies

Motor controls

Switching circuits

Amplifiers

Industrial controls

Product Lifecycle

The PHE13003C,126 is an active product and is not nearing discontinuation.

Replacement or upgraded versions may be available in the future.

Several Key Reasons to Choose This Product

Reliable and robust performance in high-voltage and high-current applications

Compact and easy-to-use TO-92-3 package

Compliance with RoHS directives for environmental responsibility

Suitable for a wide range of general-purpose electronic applications