PHE13003C,126 - NXP USA Inc.

Manufacturer Part Number

PHE13003C,126

Manufacturer

NXP Semiconductors

Introduction

Bipolar junction transistor (BJT) in a single transistor package

Product Features and Performance

High voltage breakdown capability up to 400V

High collector current rating up to 1.5A

Low collector-emitter saturation voltage

Wide operating temperature range up to 150°C

Product Advantages

Suitable for high voltage, high current switching and amplifier applications

Robust design for reliable performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 400V

Collector Current (Max): 1.5A

Collector Cutoff Current (Max): 100μA

DC Current Gain (Min): 5 @ 1A, 2V

Power Dissipation (Max): 2.1W

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

Meets industry standards for quality and reliability

RoHS compliant

Compatibility

TO-92-3 and TO-226-3 (TO-226AA) package options

Application Areas

High voltage, high current switching circuits

Power amplifiers

Motor control

Industrial electronics

Product Lifecycle

Currently in active production

Replacement options and upgrades available

Key Reasons to Choose This Product

Proven high voltage and high current capability

Reliable performance over wide temperature range

Compact and versatile package options

Compliance with industry quality and safety standards