Manufacturer Part Number
SUM60N10-17-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement mode power MOSFET in a TO-263 (DPak) package.
Product Features and Performance
100V drain-source voltage
60A continuous drain current at 25°C
5mOhm max on-resistance at 30A, 10V
4300pF max input capacitance at 25V
75W max power dissipation at 25°C
-55°C to 175°C operating temperature range
Product Advantages
Trench technology for low on-resistance
High current handling capability
Compact TO-263 (DPak) package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 16.5mOhm @ 30A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 4300pF @ 25V
Power Dissipation (Pd): 3.75W @ 25°C, 150W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation
Compatibility
Suitable for surface mount applications
Application Areas
High-frequency switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently available
No immediate plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High current handling and low on-resistance
Compact and efficient TO-263 (DPak) package
Suitable for high-frequency, high-temperature applications
Reliable performance and RoHS compliance
Wide range of compatible applications
SUM60N04-06T MOSElectro-Films (EFI) / Vishay