Manufacturer Part Number
SUD09P10-195-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
P-Channel FET
Trench FET Technology
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Tape & Reel (TR) Packaging
Wide Operating Temperature Range: -55°C to 150°C (TJ)
Product Advantages
High Drain-Source Voltage: 100V
Low On-Resistance: 195mΩ @ 3.6A, 10V
High Continuous Drain Current: 8.8A (Tc)
Low Input Capacitance: 1055pF @ 50V
High Power Dissipation: 2.5W (Ta), 32.1W (Tc)
Key Technical Parameters
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
General purpose power switching and control applications
Product Lifecycle
Currently available, no discontinuation information
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Compact surface mount package
RoHS compliance for environmental safety