Manufacturer Part Number
SUD08P06-155L-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product: Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
60V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
155mOhm Rds On @ 5A, 10V
4A Continuous Drain Current (Id) @ 25°C
450pF Input Capacitance (Ciss) @ 25V
7W Power Dissipation (Max) @ Ta, 20.8W @ Tc
19nC Gate Charge (Qg) @ 10V
-55°C to 150°C Operating Temperature (TJ)
Product Advantages
Optimized performance for power conversion and control applications
Low on-resistance for efficient power delivery
High reliability and ruggedness
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Current Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Quality and Safety Features
ROHS3 Compliant
Meets international quality and safety standards
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Surface Mount Mounting Type
Application Areas
Power conversion and control applications
Suitable for use in various electronic devices and systems
Product Lifecycle
Currently available product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Optimized performance for power applications
Low on-resistance for efficient power delivery
High reliability and ruggedness
Meets international quality and safety standards
Compatibility with common package and mounting types
Suitable for a wide range of electronic devices and systems