Manufacturer Part Number
SQS415ENW-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
The SQS415ENW-T1_GE3 is a P-channel MOSFET transistor from Vishay's TrenchFET series, designed for automotive and other high-reliability applications.
Product Features and Performance
AEC-Q101 qualified for automotive use
Operates over a wide temperature range of -55°C to 175°C
Low on-resistance of 16.1 mΩ @ 12A, 10V
High drain current rating of 16A @ 25°C
Low input capacitance of 4825 pF @ 25V
High power dissipation of 62.5W
Product Advantages
Robust and reliable design for demanding applications
Excellent thermal performance
Low on-resistance for efficient power switching
Compact and space-saving PowerPAK 1212-8W package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 2.5V @ 250A
Drive Voltage (Vgs): 4.5V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg): 82 nC @ 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of electronic circuits and systems
Suitable for use in automotive, industrial, and other high-reliability applications
Application Areas
Power management and control circuits
Motor drives
Switching power supplies
Automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available if needed
Key Reasons to Choose This Product
Robust and reliable design for demanding applications
Excellent thermal performance and high power dissipation
Low on-resistance for efficient power switching
Compact and space-saving package
AEC-Q101 qualified for automotive use
RoHS3 compliant for environmental compliance