Manufacturer Part Number
SQS401EN-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
High performance power MOSFET with low on-resistance.
Product Features and Performance
Trench MOSFET technology for low on-resistance
Designed for high-frequency, high-power switching applications
Excellent thermal characteristics for high power dissipation
Product Advantages
Minimized conduction losses
Improved efficiency in power conversion circuits
Compact size and high power density
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 29mΩ @ 12A, 10V
Continuous Drain Current (Id): 16A @ 25°C
Input Capacitance (Ciss): 1875pF @ 20V
Power Dissipation (Ptot): 62.5W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable trench MOSFET technology
Compatibility
Suitable for high-frequency, high-power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Battery chargers
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance and efficiency
Compact and thermally efficient design
Reliable trench MOSFET technology
Suitable for a wide range of high-power switching applications