Manufacturer Part Number
SQJ974EP-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance dual N-channel TrenchFET power MOSFET in a compact PowerPAK SO-8 Dual package.
Product Features and Performance
Automotive, AEC-Q101 qualified
Very low on-resistance (RDS(on)) for high efficiency
High current handling capability up to 30A
Low gate charge for fast switching
Wide operating temperature range from -55°C to 175°C
Product Advantages
Optimized for high-frequency, high-efficiency power conversion applications
Excellent thermal performance in a compact package
Suitable for automotive and industrial applications
Key Technical Parameters
Drain to Source Voltage (VDS): 100V
On-Resistance (RDS(on)): 25.5mΩ @ 10A, 10V
Continuous Drain Current (ID): 30A
Input Capacitance (Ciss): 1050pF @ 25V
Gate Threshold Voltage (VGS(th)): 2.5V @ 250A
Gate Charge (Qg): 30nC @ 10V
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Suitable for a wide range of power conversion applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Automotive electronics
Industrial power electronics
Telecommunications equipment
Consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability
Fast switching speed and low gate charge
Automotive and industrial qualifications
Compact and space-saving PowerPAK SO-8 Dual package
SQJ963EP-T1-GE3Electro-Films (EFI) / Vishay