SQJ968EP-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQJ968EP-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Product Features and Performance

Automotive, AEC-Q101, TrenchFET series

2 N-Channel (Dual) configuration

60V Drain to Source Voltage (Vdss)

6mOhm Rds On (Max) @ 4.8A, 10V

5A Continuous Drain Current (Id) @ 25°C

714pF Input Capacitance (Ciss) (Max) @ 30V

5V Vgs(th) (Max) @ 250A

5nC Gate Charge (Qg) (Max) @ 10V

-55°C ~ 175°C Operating Temperature

42W Power Max (Tc)

Product Advantages

Automotive-grade performance

High current capability

Low on-resistance

High voltage rating

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Rds On (Max) @ Id, Vgs: 33.6mOhm @ 4.8A, 10V

Continuous Drain Current (Id) @ 25°C: 23.5A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V

Vgs(th) (Max) @ Id: 2.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V

Quality and Safety Features

ROHS3 Compliant

PowerPAK SO-8 Dual package

Compatibility

Surface Mount Mounting Type

Application Areas

Automotive and industrial applications

Product Lifecycle

Currently available

No information on discontinuation or replacements

Several Key Reasons to Choose This Product

Automotive-grade performance and reliability

High current and voltage handling capabilities

Low on-resistance for improved efficiency

Small PowerPAK SO-8 Dual package for compact design