SQJ461EP-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQJ461EP-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel enhancement-mode power MOSFET for automotive and industrial applications

Product Features and Performance

AEC-Q101 qualified for automotive applications

Low on-resistance of 16 mΩ at 14.4 A, 10 V

Low gate charge of 140 nC at 10 V

High continuous drain current of 30 A at 25°C

Product Advantages

Improved efficiency and thermal management

Reduced switching and conduction losses

Compact and space-saving design

Key Technical Parameters

Drain to Source Voltage (Vdss): 60 V

Vgs (Max): ±20 V

Operating Temperature: -55°C to 175°C (TJ)

Input Capacitance (Ciss): 4710 pF at 30 V

Power Dissipation (Max): 83 W (Tc)

Quality and Safety Features

RoHS3 compliant

Automotive-grade AEC-Q101 qualification

Compatibility

Suitable for a wide range of automotive and industrial applications

Application Areas

Automotive systems (e.g., power steering, engine control, transmission)

Industrial equipment (e.g., power supplies, motor drives, power conversion)

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options may be available from Vishay/Siliconix

Key Reasons to Choose This Product

Excellent performance characteristics (low on-resistance, high current, low gate charge)

Automotive-grade reliability and qualification

Compact and space-saving PowerPAK SO-8 package

Broad compatibility and suitability for various applications