Manufacturer Part Number
SQJ459EP-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
Automotive, AEC-Q101, TrenchFET series
P-Channel MOSFET
Drain to Source Voltage (Vdss): 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Current Continuous Drain (Id) @ 25°C: 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10V
Product Advantages
Automotive and AEC-Q101 qualified
Compact PowerPAK SO-8 package
Low on-resistance for high efficiency
High current capability
Wide temperature range (-55°C to 175°C)
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Current Continuous Drain (Id) @ 25°C: 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Automotive and AEC-Q101 qualified
Compatibility
Tape & Reel (TR) packaging
Surface Mount
Application Areas
Automotive electronics
Industrial equipment
Power supplies
Motor drives
Product Lifecycle
Current product
Replacements and upgrades may be available
Key Reasons to Choose
Automotive and AEC-Q101 qualified for reliability
Compact PowerPAK SO-8 package for space-constrained designs
Low on-resistance for high efficiency
High current capability up to 52A
Wide temperature range for diverse applications
SQJ463EP-T1-GE3Electro-Films (EFI) / Vishay