Manufacturer Part Number
SQJ138EP-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance power MOSFET transistor suitable for automotive and industrial applications.
Product Features and Performance
Automotive-grade AEC-Q101 qualified
TrenchFET Gen IV technology
Low on-resistance (RDS(on) = 1.8 mΩ)
High current rating (ID = 330 A)
Wide operating temperature range (-55°C to 175°C)
Low gate charge (Qg = 81 nC)
High power dissipation (Pd = 312 W)
Product Advantages
Excellent power efficiency
Reliable performance in harsh environments
Suitable for high-current, high-voltage applications
Enables compact and lightweight design
Key Technical Parameters
Drain-Source Voltage (VDS): 40 V
Gate-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 330 A
On-Resistance (RDS(on)): 1.8 mΩ
Input Capacitance (Ciss): 4715 pF
Gate Charge (Qg): 81 nC
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Reliable and robust design
Compatibility
Suitable for surface mount applications
Compatible with PowerPAK SO-8 package
Application Areas
Automotive electronics (e.g., motor drives, power converters)
Industrial power conversion and control systems
Telecommunication and server power supplies
Renewable energy systems
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available, depending on application requirements.
Several Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable operation in harsh environments
Compact and lightweight design
Automotive-grade quality and safety
Suitable for a wide range of high-power applications
SQJ140EP-T1_GE3Vishay