Manufacturer Part Number
SQJ402EP-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
RoHS3 Compliant
PowerPAK SO-8 package
Automotive, AEC-Q101, TrenchFET series
Operating temperature range: -55°C to 175°C
Drain-to-Source Voltage (Vdss): 100V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 11mΩ @ 10A, 10V
Continuous Drain Current (Id): 32A @ 25°C
Input Capacitance (Ciss): 2289pF @ 40V
Power Dissipation (Tc): 83W
N-Channel MOSFET
Gate Threshold Voltage (Vgs(th)): 2.5V @ 250A
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg): 51nC @ 10V
Product Advantages
High power density
Low on-state resistance
Automotive-qualified
Wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 11mΩ
Continuous Drain Current (Id): 32A
Quality and Safety Features
RoHS3 compliant
Automotive-qualified (AEC-Q101)
Compatibility
Surface mount package (PowerPAK SO-8)
Application Areas
Automotive
Industrial
Power management
Product Lifecycle
Current product
Replacements and upgrades may be available
Several Key Reasons to Choose This Product
High power density
Low on-state resistance
Automotive-qualified
Wide temperature range