SIZ342DT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZ342DT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual N-channel TrenchFET MOSFET in a compact 8-PowerWDFN package.

Product Features and Performance

Tight Rds(on) matching between channels

Low gate charge and high-speed switching

Optimized for high-frequency, high-current applications

Robust TrenchFET technology

Very low on-resistance and high current handling

Product Advantages

Compact package for space-saving designs

Excellent thermal performance

Improved energy efficiency

High power density

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-resistance (Rds(on)): 11.5mΩ @ 14A, 10V

Continuous Drain Current (Id): 15.7A (Ta), 100A (Tc)

Input Capacitance (Ciss): 650pF @ 15V

Gate Threshold Voltage (Vgs(th)): 2.4V @ 250A

Gate Charge (Qg): 20nC @ 10V

Quality and Safety Features

RoHS3 compliant

Reliable TrenchFET technology

ESD protection

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

High-frequency switching power supplies

Motor drives

Telecommunication and industrial equipment

Automotive electronics

Product Lifecycle

Current product offering

No discontinuation plans

Replacement/upgrade options available

Key Reasons to Choose This Product

High power density and efficiency

Robust and reliable performance

Compact and space-saving design

Optimized for high-frequency, high-current applications

Excellent thermal management