Manufacturer Part Number
SIZ710DT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
6-PowerPair Packaging
TrenchFET Series
Tape & Reel (TR) Packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 27W, 48W
2 N-Channel (Half Bridge) Configuration
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 16A, 35A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Logic Level Gate FET Feature
Vgs(th) (Max) @ Id: 2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Surface Mount Mounting Type
Product Advantages
High power density
Low on-resistance
Suitable for high-current applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Current Continuous Drain (Id) @ 25°C: 16A, 35A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
High-current applications
Power management circuits
Motor control
Switching power supplies
Product Lifecycle
Currently available
No known discontinuation or replacement plans
Key Reasons to Choose This Product
High power density
Low on-resistance
Suitable for high-current applications
ROHS3 compliant
Wide operating temperature range
Versatile applications in power management, motor control, and switching power supplies
SIZ900DP-T1-GE3Electro-Films (EFI) / Vishay