Manufacturer Part Number
SIS612EDNT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Voltage Rating: 20V
Continuous Drain Current: 50A
On-Resistance: 3.9mΩ
Power Dissipation: 3.7W (Ta), 52W (Tc)
Input Capacitance: 2060pF
Gate Charge: 70nC
Operating Temperature: -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Wide temperature range
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs Max): ±12V
Threshold Voltage (Vgs(th) Max): 1.2V
On-Resistance (Rds(on) Max): 3.9mΩ
Continuous Drain Current (Id): 50A
Quality and Safety Features
RoHS3 compliant
Vishay / Siliconix quality and reliability
Compatibility
Suitable for various power electronics applications
Application Areas
Power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance with low on-resistance
High current handling capacity
Wide operating temperature range
Compact surface mount package
Reputable Vishay / Siliconix brand quality