Manufacturer Part Number
SIS606BDN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
TrenchFET Gen IV Technology
Wide Voltage Range: 100V Drain-Source Voltage
Low On-Resistance: 17.4mΩ max @ 10A, 10V
High Current Capability: 9.4A Continuous Drain Current (Ta), 35.3A (Tc)
Fast Switching: Low Gate Charge of 30nC max @ 10V
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Excellent Performance in Power Conversion and Motor Drive Applications
Optimized for High Efficiency and Power Density
Robust Design Suitable for Harsh Environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 17.4mΩ max @ 10A, 10V
Continuous Drain Current (Id): 9.4A (Ta), 35.3A (Tc)
Input Capacitance (Ciss): 1470pF max @ 50V
Power Dissipation: 3.7W (Ta), 52W (Tc)
Gate Charge (Qg): 30nC max @ 10V
Quality and Safety Features
RoHS3 Compliant
Suitable for Harsh Environments
Compatibility
Surface Mount Package: PowerPAK 1212-8
Tape and Reel Packaging
Application Areas
Power Conversion
Motor Drives
Industrial Electronics
Automotive Electronics
Product Lifecycle
Current Production
No Pending Discontinuation
Replacements and Upgrades Available
Key Reasons to Choose
Excellent Performance and Efficiency
High Current Handling Capability
Fast Switching for Power Conversion
Robust Design for Harsh Environments
Wide Operating Temperature Range
RoHS Compliance for Environmental Friendliness