Manufacturer Part Number
SIHP8N50D-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance power MOSFET with low on-resistance and fast switching for high-efficiency power conversion applications
Product Features and Performance
Drain-source voltage up to 500V
Low on-resistance (Rds(on)) of 850mΩ @ 4A, 10V
High continuous drain current of 8.7A at 25°C
Fast switching with low gate charge of 30nC @ 10V
Wide operating temperature range of -55°C to 150°C
High power dissipation of 156W at Tc
Product Advantages
Efficient power conversion with low conduction and switching losses
Compact size and high power density
Robust and reliable performance across wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 850mΩ @ 4A, 10V
Drain Current (Id): 8.7A @ 25°C
Input Capacitance (Ciss): 527pF @ 100V
Power Dissipation (Pd): 156W @ Tc
Quality and Safety Features
RoHS3 compliant
Through-hole mounting in TO-220AB package
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Appliances
Product Lifecycle
Currently in active production, with no indication of discontinuation. Replacement or upgrade options may be available from Vishay.
Key Reasons to Choose This Product
Excellent efficiency and power density for high-performance power conversion
Robust and reliable operation across wide temperature range
Easy to integrate with through-hole mounting
Proven Vishay quality and reliability
SIHP35N60EElectro-Films (EFI) / Vishay