SIHP33N60E-GE3 - Vishay Siliconix

Manufacturer Part Number

SIHP33N60E-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET with fast switching and low on-resistance.

Product Features and Performance

High voltage rating of 600 V

Low on-resistance of 99 mΩ

High continuous drain current of 33 A at 25°C

Fast switching and low gate charge of 150 nC

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power conversion efficiency

Reliable and robust performance

Suitable for high-voltage, high-current applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600 V

Gate-to-Source Voltage (Vgs): ±30 V

On-resistance (Rds(on)): 99 mΩ

Continuous Drain Current (Id): 33 A

Input Capacitance (Ciss): 3508 pF

Power Dissipation (Pd): 278 W

Quality and Safety Features

RoHS3 compliant

TO-220AB package for reliable thermal management

Compatibility

Suitable for through-hole mounting

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

This product is not nearing discontinuation

Replacement or upgraded models may be available in the future

Several Key Reasons to Choose This Product

Excellent power efficiency and performance

Reliable and robust design for high-voltage, high-current applications

Wide operating temperature range and RoHS compliance

Suitable for a variety of industrial and consumer electronics applications