Manufacturer Part Number
SIHP30N60E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-power, high-voltage N-channel enhancement mode power MOSFET with low on-resistance.
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 125mΩ @ 15A, 10V
High continuous drain current of 29A (Tc)
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2600pF @ 100V
High power dissipation of 250W (Tc)
Product Advantages
Excellent for high-power, high-voltage switching applications
Offers low conduction losses and high energy efficiency
Suitable for rugged and reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 125mΩ @ 15A, 10V
Continuous Drain Current (Id): 29A (Tc)
Input Capacitance (Ciss): 2600pF @ 100V
Power Dissipation (Pd): 250W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Through-hole mounting in TO-220-3 package
Application Areas
High-power, high-voltage switching applications
Industrial power supplies
Motor drives
Inverters
Switch-mode power supplies
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance characteristics for high-power, high-voltage applications
Reliable and rugged design for demanding operating conditions
Efficient operation with low conduction losses
Wide range of compatibility and adaptability
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