Manufacturer Part Number
SIHP12N65E-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIHP12N65E-GE3 is a high-performance N-channel MOSFET transistor designed for a wide range of power electronics applications.
Product Features and Performance
High voltage rating of 650V
Low on-resistance of 380mΩ at 6A, 10V
Compact TO-220AB package
Operating temperature range of -55°C to 150°C
High continuous drain current of 12A at 25°C
Low input capacitance of 1224pF at 100V
High power dissipation of 156W at case temperature
Product Advantages
Excellent power switching and efficiency
Robust and reliable performance
Suitable for high voltage, high current applications
Compact and easy to integrate design
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A at 25°C
Input Capacitance (Ciss): 1224pF @ 100V
Power Dissipation (Pd): 156W at case temperature
Quality and Safety Features
RoHS3 compliant
Robust TO-220AB package
Suitable for through-hole mounting
Compatibility
Widely compatible with various power electronics circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and home appliances
Automotive electronics
Product Lifecycle
Currently available
No discontinuation plans
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust performance
Wide operating temperature range
Compact and easy to integrate design
Suitable for high voltage, high current applications
Cost-effective solution for power electronics
SIHP15N60EElectro-Films (EFI) / Vishay