Manufacturer Part Number
SIHP12N60E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance power MOSFET with low on-resistance designed for high-frequency switching power supplies and motor drive applications.
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 380mΩ @ 6A, 10V
High current rating of 12A continuous drain current at 25°C
Low gate charge of 58nC @ 10V
Wide operating temperature range of -55°C to 150°C
MOSFET technology with N-channel design
Product Advantages
Excellent efficiency in power conversion applications
Suitable for high-frequency, high-voltage switching
Robust design with high reliability
Versatile for various power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 937pF @ 100V
Power Dissipation (Tc): 147W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting in TO-220AB package
Compatibility
Suitable for use in high-frequency switching power supplies, motor drives, and other power electronics applications.
Application Areas
Switching power supplies
Motor drives
Inverters
Power converters
Industrial and consumer electronics
Product Lifecycle
Current product, no indications of discontinuation
Replacements and upgrades available from Vishay/Siliconix
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and low on-resistance
Robust and reliable design for high-frequency operation
Versatile for a wide range of power electronics applications
Availability of replacements and ongoing product support from the manufacturer
SIHP16N50CElectro-Films (EFI) / Vishay