Manufacturer Part Number
SIE808DF-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET MOSFET for power management applications
Product Features and Performance
20V Drain-Source Voltage
60A Continuous Drain Current
Low On-Resistance of 1.6mΩ
Fast Switching Speed
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Improved efficiency and reduced power loss
Compact design with surface mount package
Suitable for a variety of power management applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.6mΩ
Drain Current (Id): 60A
Input Capacitance (Ciss): 8800pF
Power Dissipation: 5.2W (Ta), 125W (Tc)
Quality and Safety Features
RoHS3 Compliant
Reliable and robust design
Compatibility
Surface mount package (10-PolarPAK(L))
Application Areas
Power supplies
Servers and data centers
Industrial and automotive applications
Telecommunications equipment
Product Lifecycle
No discontinuation plans
Replacements and upgrades available
Key Reasons to Choose this Product
Excellent performance with low on-resistance
Wide operating temperature range
Compact and efficient design
Suitable for diverse power management applications
Reliable and RoHS compliant