Manufacturer Part Number
SIE802DF-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET with advanced trench technology.
Product Features and Performance
Very low on-resistance
Extremely low gate charge
Fast switching speed
High current capability
Suitable for high-frequency switching applications
Product Advantages
Optimized for high-frequency, high-current switching
Excellent thermal efficiency
Robust and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs Max): ±20 V
On-Resistance (Rds On Max): 1.9 mΩ
Continuous Drain Current (Id): 60 A
Input Capacitance (Ciss Max): 7000 pF
Power Dissipation (Max): 5.2 W (Ta), 125 W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-frequency, high-current switching applications
Application Areas
Power supplies
Motor drives
Industrial controls
Telecommunications equipment
Product Lifecycle
Actively supported product
Replacements and upgrades available
Key Reasons to Choose This Product
Exceptional performance in high-frequency, high-current switching
Excellent thermal management and efficiency
Robust and reliable design for demanding applications
Comprehensive technical support and product lifecycle