SIDR870ADP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIDR870ADP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET with ultra-low on-resistance and advanced trench technology.

Product Features and Performance

Extremely low on-resistance for reduced conduction losses

Fast switching speed for high-efficiency power conversion

Optimized for high-current, high-frequency applications

Robust design with high gate-source and drain-source voltage ratings

Product Advantages

Superior energy efficiency

Improved system reliability

Compact and space-saving design

Supports high-power, high-density applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 100V

Vgs (Max): ±20V

On-Resistance (Rds(on)): 6.6mΩ @ 20A, 10V

Continuous Drain Current (Id): 95A @ 25°C

Input Capacitance (Ciss): 2866pF @ 50V

Power Dissipation (Tc): 125W

Quality and Safety Features

RoHS3 compliant

Robust and reliable design for industrial and automotive applications

Compatibility

Compatible with various power supply, motor control, and power conversion systems

Application Areas

High-power, high-frequency switch-mode power supplies

Motor drives and industrial automation

Electric vehicles and renewable energy systems

Telecom and data center power management

Product Lifecycle

Currently in active production

Suitable replacement and upgrade options available

Key Reasons to Choose This Product

Exceptional energy efficiency and low conduction losses

High-speed switching for high-frequency, high-efficiency operation

Robust design with high voltage and current ratings

Compact and space-saving package for dense power electronics

Reliable performance in demanding industrial and automotive environments