SIDR668DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIDR668DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

Trench MOSFET, Gen IV series

Wide operating temperature range: -55°C to 150°C (TJ)

High drain-source voltage: 100V

Low on-resistance: 4.8mΩ @ 20A, 10V

High continuous drain current: 23.2A (Ta), 95A (Tc)

Low input capacitance: 5400pF @ 50V

High power dissipation: 6.25W (Ta), 125W (Tc)

N-channel MOSFET

Product Advantages

Excellent performance in high power, high frequency applications

Efficient heat dissipation

Robust and reliable design

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs) Max: ±20V

On-Resistance (Rds(on)) Max: 4.8mΩ @ 20A, 10V

Continuous Drain Current (Id): 23.2A (Ta), 95A (Tc)

Input Capacitance (Ciss) Max: 5400pF @ 50V

Power Dissipation Max: 6.25W (Ta), 125W (Tc)

Quality and Safety Features

RoHS3 compliant

PowerPAK SO-8DC package

Compatibility

Suitable for a wide range of high-power, high-frequency applications

Application Areas

Power supplies

Inverters

Motor drives

Telecom and industrial equipment

Product Lifecycle

Current product, no discontinuation or end-of-life plans

Several Key Reasons to Choose This Product

Excellent performance in high power, high frequency applications

Efficient heat dissipation and robust design

Wide operating temperature range

High drain-source voltage and low on-resistance

High continuous drain current capability

Small and compact PowerPAK SO-8DC package