Manufacturer Part Number
SI9936BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
8-SOIC Package
Surface Mount Mounting
-55°C to 150°C Operating Temperature
1W Maximum Power
Dual N-Channel MOSFET Configuration
30V Drain-to-Source Voltage
35mOhm Maximum On-Resistance @ 6A, 10V
MOSFET Technology
5A Continuous Drain Current @ 25°C
Logic Level Gate
3V Maximum Gate Threshold Voltage @ 250μA
13nC Maximum Gate Charge @ 10V
Product Advantages
RoHS3 Compliance for Environmental Friendliness
Compact 8-SOIC Surface Mount Package
Wide Operating Temperature Range
Dual N-Channel Design for Space-Saving Applications
Low On-Resistance for Efficient Power Switching
Logic Level Gate for Easy Integration
Key Technical Parameters
Drain-to-Source Voltage: 30V
On-Resistance: 35mOhm Max @ 6A, 10V
Continuous Drain Current: 4.5A @ 25°C
Gate Threshold Voltage: 3V Max @ 250μA
Gate Charge: 13nC Max @ 10V
Quality and Safety Features
RoHS3 Compliance for Environmental Safety
Wide Operating Temperature Range for Reliability
Compatibility
Compatible with various electronic circuits and systems requiring dual N-Channel MOSFET devices
Application Areas
Suitable for power management, switching, and control applications in electronic devices
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement or upgrade options may be available from Vishay/Siliconix or other MOSFET suppliers
Key Reasons to Choose
RoHS3 compliance for environmental responsibility
Compact surface mount package for space-saving design
Wide operating temperature range for versatility
Dual N-Channel configuration for efficient power switching
Low on-resistance for improved efficiency
Logic level gate for easy integration into control circuits
SI9936SI