Manufacturer Part Number
SI9936DY
Manufacturer
onsemi
Introduction
The SI9936DY is a dual N-channel MOSFET transistor designed for power switching and control applications.
Product Features and Performance
2 N-Channel MOSFET configuration
30V Drain-Source Voltage (Vdss)
50mOhm Maximum Drain-Source On-Resistance (Rds(on)) at 5A, 10V
5A Continuous Drain Current (ID) at 25°C
525pF Maximum Input Capacitance (Ciss) at 15V
1V Maximum Gate-Source Threshold Voltage (Vgs(th)) at 250μA
35nC Maximum Gate Charge (Qg) at 10V
Product Advantages
Efficient power switching and control
Low on-resistance for reduced power losses
Compact surface mount package
Key Technical Parameters
Voltage: 30V Drain-Source Voltage (Vdss)
Current: 5A Continuous Drain Current (ID) at 25°C
Resistance: 50mOhm Maximum Drain-Source On-Resistance (Rds(on)) at 5A, 10V
Capacitance: 525pF Maximum Input Capacitance (Ciss) at 15V
Threshold Voltage: 1V Maximum Gate-Source Threshold Voltage (Vgs(th)) at 250μA
Gate Charge: 35nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
Rated for -55°C to 150°C operating temperature range
900mW Power Dissipation
Compatibility
8-SOIC package, suitable for surface mount applications
Application Areas
Power switching and control circuits
Motor drives
Power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available from onsemi.
Reasons to Choose
Efficient power switching and control performance
Low on-resistance for improved energy efficiency
Compact surface mount package for space-constrained designs
Wide operating temperature range for harsh environments
Reliable and proven onsemi quality and technology