SI9933CDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI9933CDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

MOSFET (Metal Oxide) Technology

2 P-Channel (Dual) Configuration

Logic Level Gate FET Feature

Drain to Source Voltage (Vdss) of 20V

RDS(ON) (Max) of 58mOhm @ 4.8A, 4.5V

Continuous Drain Current (ID) of 4A @ 25°C

Input Capacitance (Ciss) of 665pF @ 10V

Gate Charge (Qg) of 26nC @ 10V

Operating Temperature Range of -50°C to 150°C (TJ)

Power Rating of 3.1W

Product Advantages

Logic level gate for easy drive

Low on-resistance for efficient power switching

Dual configuration for space-saving design

Wide operating temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

RDS(ON) (Max) @ ID, VGS: 58mOhm @ 4.8A, 4.5V

Continuous Drain Current (ID) @ 25°C: 4A

Input Capacitance (Ciss) (Max) @ VDS: 665pF @ 10V

Gate Threshold Voltage (VGS(th)) (Max) @ ID: 1.4V @ 250A

Gate Charge (Qg) (Max) @ VGS: 26nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

8-SOIC (0.154", 3.90mm Width) Package

Application Areas

Power switching and control applications

Product Lifecycle

Active product

Replacements and upgrades available

Key Reasons to Choose This Product

Logic level gate for easy drive

Low on-resistance for efficient power switching

Dual configuration for space-saving design

Wide operating temperature range

RoHS3 compliant for environmental responsibility