SI9933BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI9933BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI9933BDY-T1-E3 is a dual P-channel MOSFET transistor from Vishay / Siliconix.

Product Features and Performance

2 P-Channel MOSFET transistors in a single package

20V Drain-to-Source Voltage (Vdss)

60mΩ maximum On-Resistance (Rds(on)) at 4.7A, 4.5V

6A continuous Drain Current (Id) at 25°C

4V maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 250μA

9nC maximum Gate Charge (Qg) at 4.5V

Product Advantages

Compact 8-SOIC surface mount package

Logic level gate for easy interface with logic circuits

Capable of handling higher currents up to 3.6A

Low on-resistance for efficient power switching

Key Technical Parameters

Operating Temperature Range: -55°C to 150°C

Maximum Power Dissipation: 1.1W

RoHS Compliant (ROHS3)

Quality and Safety Features

Manufactured using Vishay's reliable MOSFET technology

Compliant with industry safety and quality standards

Compatibility

Suitable for a wide range of low-to-medium power switching and amplification applications

Application Areas

Power management circuits

Motor control

Battery charging/discharging

General purpose switching and amplification

Product Lifecycle

The SI9933BDY-T1-E3 is an actively supported product, with no indication of discontinuation.

Replacement or upgrade options may be available from Vishay/Siliconix or other MOSFET manufacturers.

Key Reasons to Choose This Product

Reliable performance and quality from a trusted manufacturer

Compact surface mount package with logic level gate

Capable of handling higher currents up to 3.6A

Low on-resistance for efficient power switching

Suitable for a wide range of applications in power management, motor control, and more.