Manufacturer Part Number
SI9407BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-channel TrenchFET power MOSFET
Designed for power management and switching applications
Product Features and Performance
Low on-resistance (RDS(on) max = 120 mΩ @ 3.2 A, 10 V)
High current capability (ID(cont) = 4.7 A @ 25°C)
Low gate charge (Qg max = 22 nC @ 10 V)
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (Ciss max = 600 pF @ 30 V)
Product Advantages
Excellent performance for power management and switching applications
Suitable for a variety of applications requiring high efficiency and fast switching
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60 V
Gate-to-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 120 mΩ max @ 3.2 A, 10 V
Continuous Drain Current (ID(cont)): 4.7 A @ 25°C
Input Capacitance (Ciss): 600 pF max @ 30 V
Power Dissipation (PD): 2.4 W (Ta), 5 W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Surface mount package (8-SOIC)
Tape and reel packaging
Application Areas
Power management and switching applications
Industrial and automotive electronics
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high current capability, and fast switching speed
Robust design for reliable operation in a wide temperature range
Suitable for a variety of power management and switching applications
RoHS3 compliance for use in industrial and automotive environments
Surface mount package and tape and reel packaging for efficient manufacturing and assembly