Manufacturer Part Number
SI9407BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI9407BDY-T1-E3 is a single P-Channel MOSFET transistor from Vishay/Siliconix's TrenchFET series.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
7A Continuous Drain Current (Id) at 25°C
120mΩ Maximum On-Resistance (Rds(on)) at 3.2A, 10V
600pF Maximum Input Capacitance (Ciss) at 30V
5W Maximum Power Dissipation at Tc
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compatible with a wide range of operating voltages
Suitable for various power management and control applications
Key Technical Parameters
P-Channel MOSFET transistor
60V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
3V Maximum Gate Threshold Voltage (Vgs(th)) at 250µA
22nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
-55°C to 150°C operating temperature range
Compatibility
Surface mount 8-SOIC package
Application Areas
Power management and control circuits
Motor drives
Switch-mode power supplies
Battery charging and discharging
General-purpose switching applications
Product Lifecycle
The SI9407BDY-T1-E3 is an active product and no discontinuation or replacement information is available.
Key Reasons to Choose This Product
High current handling capability up to 4.7A
Low on-resistance for efficient power switching
Wide operating voltage range up to 60V
Compact and space-saving 8-SOIC surface mount package
Suitable for a variety of power management and control applications