Manufacturer Part Number
SI8809EDB-T2-E1
Manufacturer
Vishay / Siliconix
Introduction
This product is a P-channel MOSFET transistor from the Vishay/Siliconix TrenchFET series.
Product Features and Performance
20V Drain to Source Voltage (Vdss)
±8V Gate to Source Voltage (Vgs)
90mOhm Rds(on) at 1.5A, 4.5V
94A Continuous Drain Current (Id) at 25°C
500mW Power Dissipation (Max)
15nC Gate Charge (Qg) at 8V
Operating Temperature Range: -55°C to 150°C
Product Advantages
Trench MOSFET technology for low on-resistance
Small 4-Microfoot package for compact designs
Suitable for a wide range of applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max): 900mV at 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Suitable for use in power management, switching, and control circuits
Product Lifecycle
Currently in production, no plans for discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance with low on-resistance
Small package size for compact designs
Wide operating temperature range
RoHS3 compliance for environmental safety