Manufacturer Part Number
SI8800EDB-T2-E1
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
4-Microfoot Manufacturer's Packaging
4-XFBGA, CSPBGA Package / Case
4-Microfoot Supplier Device Package
TrenchFET Series
Tape & Reel (TR) Package
-55°C ~ 150°C (TJ) Operating Temperature
20 V Drain to Source Voltage (Vdss)
±8V Vgs (Max)
80mOhm @ 1A, 4.5V Rds On (Max) @ Id, Vgs
MOSFET (Metal Oxide) Technology
2A (Ta) Current Continuous Drain (Id) @ 25°C
500mW (Ta) Power Dissipation (Max)
N-Channel FET Type
1V @ 250A Vgs(th) (Max) @ Id
5V, 4.5V Drive Voltage (Max Rds On, Min Rds On)
3 nC @ 8 V Gate Charge (Qg) (Max) @ Vgs
Surface Mount Mounting Type
Product Advantages
ROHS3 Compliant
Wide Operating Temperature Range
Low On-Resistance
High Current Capability
Efficient Power Dissipation
Surface Mount Packaging
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Current Continuous Drain (Id) @ 25°C: 2A (Ta)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Packaging
Application Areas
Suitable for a wide range of electronic applications requiring high-performance MOSFET transistors
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
ROHS3 Compliant
Wide Operating Temperature Range
Low On-Resistance
High Current Capability
Efficient Power Dissipation
Surface Mount Packaging