Manufacturer Part Number
SI7904BDN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel MOSFET in PowerPAK 1212-8 Package
Product Features and Performance
Trench MOSFET technology
Logic level gate
20V drain-to-source voltage
30mΩ maximum on-resistance
6A continuous drain current
860pF maximum input capacitance
24nC maximum gate charge
-55°C to 150°C operating temperature range
Product Advantages
Compact PowerPAK 1212-8 Dual package
Low on-resistance for improved efficiency
Suitable for a wide range of applications
Key Technical Parameters
Configuration: 2 N-Channel (Dual)
Drain-to-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 30mΩ @ 7.1A, 4.5V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 860pF @ 10V
Gate Threshold Voltage (Vgs(th)): 1V @ 250A
Gate Charge (Qg): 24nC @ 8V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with -55°C to 150°C operating temperature range
Compatibility
Surface mount package
Application Areas
Switching power supplies
DC-DC converters
Motor drives
General-purpose power switching
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Compact and efficient PowerPAK 1212-8 Dual package
Low on-resistance for improved efficiency
Suitable for a wide range of power switching applications
Capable of operating in harsh environments with -55°C to 150°C temperature range
SI7904BDN-T1-GE3 MOSElectro-Films (EFI) / Vishay