SI7904BDN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7904BDN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel MOSFET in PowerPAK 1212-8 Package

Product Features and Performance

Trench MOSFET technology

Logic level gate

20V drain-to-source voltage

30mΩ maximum on-resistance

6A continuous drain current

860pF maximum input capacitance

24nC maximum gate charge

-55°C to 150°C operating temperature range

Product Advantages

Compact PowerPAK 1212-8 Dual package

Low on-resistance for improved efficiency

Suitable for a wide range of applications

Key Technical Parameters

Configuration: 2 N-Channel (Dual)

Drain-to-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 30mΩ @ 7.1A, 4.5V

Continuous Drain Current (Id): 6A @ 25°C

Input Capacitance (Ciss): 860pF @ 10V

Gate Threshold Voltage (Vgs(th)): 1V @ 250A

Gate Charge (Qg): 24nC @ 8V

Quality and Safety Features

RoHS3 compliant

Suitable for harsh environments with -55°C to 150°C operating temperature range

Compatibility

Surface mount package

Application Areas

Switching power supplies

DC-DC converters

Motor drives

General-purpose power switching

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

Compact and efficient PowerPAK 1212-8 Dual package

Low on-resistance for improved efficiency

Suitable for a wide range of power switching applications

Capable of operating in harsh environments with -55°C to 150°C temperature range