Manufacturer Part Number
SI7904BDN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
2 N-Channel (Dual) configuration
Drain to Source Voltage (Vdss) of 20V
On-Resistance (Rds On) of 30mOhm @ 7.1A, 4.5V
Continuous Drain Current (Id) of 6A @ 25°C
Input Capacitance (Ciss) of 860pF @ 10V
Logic Level Gate
Gate Threshold Voltage (Vgs(th)) of 1V @ 250A
Gate Charge (Qg) of 24nC @ 8V
Operating Temperature range of -55°C to 150°C (TJ)
Maximum Power of 17.8W
Product Advantages
High efficiency and low on-resistance
Logic level gate for easy drive
Compact PowerPAK 1212-8 Dual package
Wide operating temperature range
Key Technical Parameters
MOSFET Technology
2 N-Channel (Dual) configuration
Drain to Source Voltage (Vdss) of 20V
On-Resistance (Rds On) of 30mOhm @ 7.1A, 4.5V
Continuous Drain Current (Id) of 6A @ 25°C
Input Capacitance (Ciss) of 860pF @ 10V
Gate Threshold Voltage (Vgs(th)) of 1V @ 250A
Gate Charge (Qg) of 24nC @ 8V
Operating Temperature range of -55°C to 150°C (TJ)
Maximum Power of 17.8W
Quality and Safety Features
RoHS3 Compliant
Tape & Reel (TR) packaging
Compatibility
Surface Mount Mounting Type
Application Areas
Suitable for a wide range of power management and control applications
Product Lifecycle
Current product, no known discontinuation plans
Replacement or upgrade options may be available from Vishay/Siliconix
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved power performance
Logic level gate for easy drive and integration
Compact PowerPAK 1212-8 Dual package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental friendliness
Availability in Tape & Reel (TR) packaging for automated assembly
SI7904BDN-T1-GE3 MOSElectro-Films (EFI) / Vishay