Manufacturer Part Number
SI7892BDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching speed
Product Features and Performance
Low on-resistance (4.2 mOhm) for high efficiency
High current capability (15A continuous)
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (3775 pF)
High power dissipation (1.8W)
Product Advantages
Excellent thermal management
Reliable performance in high-power applications
Efficient power conversion
Versatile usage in various electronics
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 3V
Gate Charge (Qg): 40 nC
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Reliable and durable construction
Compatibility
Suitable for surface mount applications
Compatible with PowerPAK SO-8 package
Application Areas
Power supplies
Motor drives
Automotive electronics
Industrial control systems
Product Lifecycle
This product is actively supported and not nearing discontinuation
Replacement or upgrade options are available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Wide operating temperature range for versatile applications
Reliable and durable construction for long-term use
Compatibility with common surface mount packages
Availability of replacement and upgrade options