SI7892BDP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7892BDP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel PowerPAK SO-8 TrenchFET MOSFET

Product Features and Performance

Low Rds(on) of 4.2 mOhm at 25A, 10V

Fast switching speed

High power density

Low gate charge of 40 nC at 4.5V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent thermal performance

Compact and space-saving package

Reliable and robust design

Suitable for high power and high frequency applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs) Max: ±20V

Continuous Drain Current (Id) at 25°C: 15A

Input Capacitance (Ciss) Max at 15V: 3775 pF

Power Dissipation (Max) at 25°C: 1.8W

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of electronic applications

Application Areas

High-power switching

Motor drives

Power supplies

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent electrical performance with low Rds(on) and fast switching

Compact and space-saving PowerPAK SO-8 package

Reliable and robust design for harsh environments

Suitable for a variety of high-power and high-frequency applications