Manufacturer Part Number
SI7866ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET with low on-resistance and high current capability in a compact PowerPAK SO-8 package.
Product Features and Performance
Extremely low on-resistance of 2.4 mΩ at 20 A and 10 V
Continuous drain current of 40 A at 25 °C case temperature
Wide operating temperature range of -55 °C to 150 °C
Low gate charge of 125 nC at 10 V
Fast switching speeds
Compact PowerPAK SO-8 package
Product Advantages
Excellent thermal performance and power density
Enables efficient and compact power conversion designs
Ideal for high-current, high-frequency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 20 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 2.4 mΩ at 20 A, 10 V
Drain Current (Id): 40 A at 25 °C case temperature
Input Capacitance (Ciss): 5415 pF at 10 V
Power Dissipation: 5.4 W at 25 °C ambient, 83 W at 25 °C case temperature
Quality and Safety Features
ROHS3 compliant
Qualified to AEC-Q101 automotive standard
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Automotive electronics
Industrial power supplies
Telecommunication equipment
Server and computer power supplies
Household appliances
Product Lifecycle
Current production, no known plans for discontinuation
Replacement and upgrade options available from Vishay
Several Key Reasons to Choose This Product
Exceptional power density and efficiency due to ultra-low on-resistance
Robust design and wide operating temperature range for reliable performance
Compact and easy-to-use PowerPAK SO-8 package
Proven reliability and quality from a leading semiconductor manufacturer
SI7866DP-T1Electro-Films (EFI) / Vishay