Manufacturer Part Number
SI7866ADP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
Low on-resistance (2.4 mOhm max. @ 20 A, 10 V)
High current capability (40 A continuous drain current)
Low gate charge (125 nC max. @ 10 V)
Wide operating temperature range (-55°C to 150°C)
ROHS3 compliant
Product Advantages
Efficient power conversion and management
Reliable performance in harsh environments
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate-Source Voltage (Vgs) (Max): ±20 V
Input Capacitance (Ciss): 5415 pF (max. @ 10 V)
Power Dissipation (Max): 5.4 W (Ta), 83 W (Tc)
Gate Threshold Voltage (Vgs(th)) (Max): 2.2 V @ 250 A
Quality and Safety Features
ROHS3 compliant
Designed for reliable operation in various applications
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Efficient power handling and management
Reliable performance in harsh environments
Compact and space-saving design
Wide operating temperature range
Low on-resistance and high current capability
Extensive application versatility