Manufacturer Part Number
SI7409ADN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
30V Drain-to-Source Voltage
19mΩ Max On-Resistance @ 11A, 4.5V
7A Continuous Drain Current @ 25°C
5W Max Power Dissipation
-55°C to 150°C Operating Temperature Range
40nC Max Gate Charge @ 4.5V
Product Advantages
Efficient power switching
High current handling capability
Compact surface mount package
Wide temperature range operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs Max): ±12V
On-Resistance (Rds(on) Max): 19mΩ @ 11A, 4.5V
Drain Current (Id): 7A Continuous @ 25°C
Quality and Safety Features
RoHS3 Compliant
PowerPAK 1212-8 Package
Compatibility
Surface Mount Technology (SMT) compatible
Application Areas
Power management circuits
Switching power supplies
Motor control
General purpose switching
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose
Efficient power switching performance
High current handling capability
Compact and thermally efficient package
Wide operating temperature range
Compliance with industry standards
SI7414DN-T1Electro-Films (EFI) / Vishay