SI7409ADN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7409ADN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET

30V Drain-to-Source Voltage

19mΩ Max On-Resistance @ 11A, 4.5V

7A Continuous Drain Current @ 25°C

5W Max Power Dissipation

-55°C to 150°C Operating Temperature Range

40nC Max Gate Charge @ 4.5V

Product Advantages

Efficient power switching

High current handling capability

Compact surface mount package

Wide temperature range operation

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs Max): ±12V

On-Resistance (Rds(on) Max): 19mΩ @ 11A, 4.5V

Drain Current (Id): 7A Continuous @ 25°C

Quality and Safety Features

RoHS3 Compliant

PowerPAK 1212-8 Package

Compatibility

Surface Mount Technology (SMT) compatible

Application Areas

Power management circuits

Switching power supplies

Motor control

General purpose switching

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose

Efficient power switching performance

High current handling capability

Compact and thermally efficient package

Wide operating temperature range

Compliance with industry standards