Manufacturer Part Number
SI7405BDN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI7405BDN-T1-GE3 is a P-Channel MOSFET transistor from Vishay/Siliconix's TrenchFET series. It is designed for high-performance power switching applications.
Product Features and Performance
12V Drain-to-Source Voltage (Vdss)
±8V Gate-to-Source Voltage (Vgs)
13mΩ On-State Resistance (Rds(on)) at 13.5A, 4.5V
16A Continuous Drain Current (Id) at 25°C
3500pF Input Capacitance (Ciss) at 6V
115nC Gate Charge (Qg) at 8V
6W Power Dissipation at 25°C, 33W at 100°C
Product Advantages
Efficient power switching performance
High current handling capability
Low on-state resistance
Compact PowerPAK 1212-8 package
Key Technical Parameters
P-Channel MOSFET transistor
12V Drain-to-Source Voltage
±8V Gate-to-Source Voltage
13mΩ On-State Resistance
16A Continuous Drain Current
Quality and Safety Features
RoHS3 compliant
Operates in -55°C to 150°C temperature range
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
High-performance power switching applications
Power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent power switching performance
High current handling capability
Low on-state resistance
Compact and efficient package
Reliable operation in wide temperature range
RoHS3 compliance for environmental safety