Manufacturer Part Number
SI7390DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage
±20V Gate to Source Voltage
5mOhm Drain to Source On-Resistance @ 15A, 10V
9A Continuous Drain Current @ 25°C
8W Power Dissipation (Max)
-55°C to 150°C Operating Temperature Range
15nC Gate Charge @ 4.5V
Product Advantages
Efficient power switching
Low on-resistance
Wide operating temperature range
Compact PowerPAK SO-8 package
Key Technical Parameters
Drain to Source Voltage: 30V
Gate to Source Voltage: ±20V
Drain to Source On-Resistance: 9.5mOhm
Continuous Drain Current: 9A
Power Dissipation: 1.8W
Gate Charge: 15nC
Quality and Safety Features
RoHS3 Compliant
Reliable TrenchFET technology
Compatibility
Surface Mount Package: PowerPAK SO-8
Application Areas
Power management circuits
Motor drives
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Current product
Replacements and upgrades may be available
Key Reasons to Choose
Excellent power switching performance
Low on-resistance for high efficiency
Wide temperature range for versatile applications
Compact and reliable PowerPAK SO-8 package