SI7386DP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7386DP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-Channel TrenchFET MOSFET in a PowerPAK SO-8 package.

Product Features and Performance

30V drain-to-source voltage

Low on-resistance of 7mΩ @ 19A, 10V

Continuous drain current of 12A at 25°C

Maximum power dissipation of 1.8W at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 18nC @ 4.5V

Product Advantages

Excellent thermal performance and power efficiency

Small and compact PowerPAK SO-8 package

Suitable for a wide range of power conversion applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 7mΩ @ 19A, 10V

Drain Current (Id): 12A @ 25°C

Power Dissipation (Ptot): 1.8W @ 25°C

Gate Charge (Qg): 18nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Manufactured in ISO-certified facilities

Compatibility

Compatible with a wide range of power conversion and control applications.

Application Areas

Power supplies

DC-DC converters

Motor drives

Automotive electronics

Industrial automation

Product Lifecycle

This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Vishay/Siliconix.

Key Reasons to Choose This Product

Excellent thermal performance and power efficiency

Compact and space-saving PowerPAK SO-8 package

Wide operating temperature range and high reliability

Suitable for a variety of power conversion applications

Availability of technical support and product lifecycle management from Vishay/Siliconix