SI6968BEDQ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI6968BEDQ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual N-channel TrenchFET power MOSFET in 8-TSSOP package

Product Features and Performance

Optimized for high-efficiency and high-density power conversion applications

Low on-resistance and low gate charge for improved efficiency

Suitable for high-frequency switching applications

Excellent body diode characteristics

Suitable for parallel operation

Product Advantages

Compact 8-TSSOP package

High efficiency

High power density

Reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

RDS(on) (Max) @ Id, Vgs: 22mΩ @ 6.5A, 4.5V

Continuous Drain Current (Id) @ 25°C: 5.2A

Gate Threshold Voltage (Vgs(th)) (Max) @ Id: 1.6V @ 250μA

Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Can be used in a wide range of power conversion and control applications

Application Areas

Switch-mode power supplies

DC-DC converters

Motor drives

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation

Replacement or upgrade options are available if needed

Key Reasons to Choose This Product

Excellent efficiency and power density performance

Reliable and robust design

Suitable for high-frequency, high-current applications

Compact 8-TSSOP package for space-constrained designs

RoHS3 compliance for environmental responsibility