SI6968BEDQ-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI6968BEDQ-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 Compliant

8-TSSOP Package

TrenchFET Series

Tape & Reel Packaging

Operating Temperature: -55°C to 150°C

Power Rating: 1W

2 N-Channel (Dual) Common Drain Configuration

Drain to Source Voltage (Vdss): 20V

On-Resistance (Rds On): 22mΩ @ 6.5A, 4.5V

MOSFET Technology

Continuous Drain Current (Id): 5.2A @ 25°C

Logic Level Gate

Threshold Voltage (Vgs(th)): 1.6V @ 250μA

Gate Charge (Qg): 18nC @ 4.5V

Surface Mount Mounting

Product Advantages

Efficient power management

High current handling capability

Low on-resistance

Suitable for logic-level gate control

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

On-Resistance (Rds On): 22mΩ

Continuous Drain Current (Id): 5.2A

Threshold Voltage (Vgs(th)): 1.6V

Gate Charge (Qg): 18nC

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuits and systems that require high-performance MOSFET devices

Application Areas

Power management circuits

Motor control

Switching applications

Automotive electronics

Product Lifecycle

Current product

No indication of discontinuation

Replacements and upgrades available

Key Reasons to Choose This Product

Efficient power handling

Low on-resistance for improved efficiency

High current capability

Suitable for logic-level gate control

Surface mount packaging for easy integration

RoHS3 compliance for environmental responsibility