SI6913DQ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI6913DQ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual P-Channel MOSFET Array

Designed for high-density, high-performance power management applications

Product Features and Performance

Trench MOSFET technology for low on-resistance

Optimized for low-voltage, high-current applications

Efficient power delivery with low conduction losses

Fast switching performance

Product Advantages

High current capability up to 4.9A per channel

Extremely low on-resistance down to 21mΩ

Compact 8-TSSOP package for space-saving designs

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 12V

On-Resistance (Rds(on)): 21mΩ @ 5.8A, 4.5V

Gate Threshold Voltage (Vgs(th)): 900mV @ 400μA

Gate Charge (Qg): 28nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Suitable for a wide range of power management applications

Application Areas

Portable electronics

Power supplies

DC-DC converters

Motor drivers

Battery management systems

Product Lifecycle

Currently in active production

Replacements and upgrades available from Vishay/Siliconix

Key Reasons to Choose This Product

Excellent performance-to-size ratio with high current capability and low on-resistance

Compact 8-TSSOP package for space-constrained designs

Wide operating temperature range for diverse applications

Proven reliability and safety with RoHS3 compliance

Part of the TrenchFET series for optimized power management solutions