SI6913DQ-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI6913DQ-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

A dual P-channel MOSFET in an 8-TSSOP package, part of the TrenchFET series.

Product Features and Performance

12V drain-source voltage

21mΩ maximum on-resistance at 5.8A, 4.5V

9A continuous drain current at 25°C

Logic level gate with 900mV maximum threshold voltage

28nC maximum gate charge at 4.5V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact 8-TSSOP surface mount package

Low on-resistance for efficient power switching

Logic level gate for easy microcontroller interfacing

Robust trench MOSFET technology

Key Technical Parameters

Drain-Source Voltage (Vdss): 12V

On-Resistance (Rds(on)): 21mΩ @ 5.8A, 4.5V

Continuous Drain Current (Id): 4.9A @ 25°C

Gate Threshold Voltage (Vgs(th)): 900mV @ 400μA

Gate Charge (Qg): 28nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for use in a variety of power management, control, and switching applications.

Application Areas

Power supplies

Motor drives

Lighting controls

Battery charging circuits

Other power management systems

Product Lifecycle

Currently in active production. No known plans for discontinuation. Replacement parts or upgrades may be available from Vishay/Siliconix.

Key Reasons to Choose

Excellent power handling and efficiency with low on-resistance

Logic level gate for easy microcontroller integration

Robust trench MOSFET design for reliable operation

Compact 8-TSSOP surface mount package

Wide operating temperature range for diverse applications