SI6433BDQ-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI6433BDQ-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

P-Channel MOSFET Transistor

Product Features and Performance

Low on-resistance

High current capability

Wide operating temperature range

Product Advantages

Efficient power management

Reliable performance

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 12 V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 4.5V

Current Continuous Drain (Id) @ 25°C: 4A (Ta)

Power Dissipation (Max): 1.05W (Ta)

Vgs(th) (Max) @ Id: 1.5V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V

Quality and Safety Features

RoHS3 Compliant

Wide operating temperature range: -55°C ~ 150°C (TJ)

Compatibility

Suitable for surface mount applications

Application Areas

Power management circuits

Switch mode power supplies

Motor control

Telecommunications equipment

Product Lifecycle

Currently available

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

High current handling capability

Reliable performance across a wide temperature range

Compact surface mount package for space-constrained designs

RoHS compliance for environmentally-friendly applications