SI6423DQ-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI6423DQ-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single

Product Features and Performance

ROHS3 Compliant

8-TSSOP (0.173", 4.40mm Width) package

TrenchFET Series

Tape & Reel (TR) packaging

Operating Temperature: -55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss): 12 V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 8.2A (Ta)

Power Dissipation (Max): 1.05W (Ta)

P-Channel FET Type

Vgs(th) (Max) @ Id: 800mV @ 400A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V

Surface Mount Mounting Type

Product Advantages

High performance MOSFET technology

Low on-resistance

Wide operating temperature range

Compact 8-TSSOP package

Key Technical Parameters

Drain to Source Voltage (Vdss): 12 V

Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V

Current Continuous Drain (Id) @ 25°C: 8.2A (Ta)

Power Dissipation (Max): 1.05W (Ta)

Quality and Safety Features

ROHS3 Compliant

Wide operating temperature range

Compatibility

Surface Mount

Application Areas

Suitable for a wide range of power management and control applications

Product Lifecycle

Currently available, no indication of discontinuation

Several Key Reasons to Choose This Product

High performance MOSFET technology

Low on-resistance

Wide operating temperature range

Compact 8-TSSOP package

ROHS3 compliant

Suitable for a wide range of power management and control applications